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By PURPLELEC | 19 October 2024 | 0 Comments

As the silicon era fades, GaN leads a new era of electronic innovation

  Silicon has long been the material of choice for electronics manufacturing, used in products such as computers, smartphones, televisions and cameras. Silicon's rise has been driven by the widespread use of metal-oxide-semiconductor field-effect transistors (MOSFETs), which dominate analog and digital circuits. Silicon's superior conductive electromagnetic properties and affordable price make it possible to quickly and widely produce many different types of electronic products using silicon components.
  However, as Moore's Law advances, silicon's potential innovative properties have gradually slowed down, and its limitations as a building material have become increasingly apparent. Silicon semiconductors are nearing the peak of their performance and can no longer keep up with the pace of technological innovation. As a result, device performance or functionality has not been significantly improved while costs have remained the same or increased.
GaN
  In this case, gallium nitride (GaN) emerged as a new conductive material. GaN is not a new discovery. It has been widely used in fields such as LEDs and won the Nobel Prize in 2014 for inventing the technology. With the development of technology, gallium nitride is increasingly used in semiconductors, radio frequency components and other fields, and its advantages over silicon are gradually emerging.
  Gallium nitride offers higher energy efficiency, power density and switching frequency, as well as faster device speeds and lower costs. These advantages stem primarily from gallium nitride's wider bandgap and higher electrical conductivity. Compared to silicon, gallium nitride devices can withstand higher temperatures and higher switching frequencies, reducing heat loss and cooling requirements, increasing energy efficiency and power density. At the same time, the working parts of gallium nitride devices are smaller, making the equipment smaller, lighter and lower cost.
  Specifically, gallium nitride is more energy efficient and can withstand higher temperatures than silicon, thus providing higher energy efficiency. Its power density and switching frequency are also significantly higher, allowing GaN-based devices to require less cooling material and more operating power to be used in the device itself. In addition, gallium nitride devices are faster and have greater processing power, allowing them to deliver higher performance. In terms of cost, the manufacturing cost of gallium nitride devices is lower, and the devices are lighter and lower density, making the overall cost much lower than silicon-based devices.
  Therefore, gallium nitride technology is expected to become a key material to continue the advantages of Moore's Law and promote electronic innovation in the next era. With the continuous development and application of gallium nitride technology, gallium-based chargers, wireless power transmission and other equipment will provide higher performance and faster charging capabilities, bringing more convenience to people's lives. While silicon has driven world-changing technologies, the rise of gallium nitride will usher in a new era of technology.

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